| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 15.0 V |
| Operating Voltage | 2.25V ~ 18V |
| Case/Package | PDIP-8 |
| Supply Current | 700 µA |
| Number of Circuits | 1 Circuit |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Common Mode Rejection Ratio | 130 dB |
| Quiescent Current | 700 µA |
| Bandwidth | 1.3 MHz |
| Slew Rate | 4.00 V/μs |
| Gain Bandwidth Product | 1.3 MHz |
| Gain | 10.0 kdB |
| Input Offset Voltage | 125 µV |
| Input Bias Current | 2 nA |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| 3dB Bandwidth | 1.3 MHz |
| Minimum CMRR Range | 73 dB |
| Supply Voltage (Max) | 30V ~ 50V |
| Supply Voltage (Min) | 4.5 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 9.81 mm |
| Size-Width | 6.35 mm |
| Size-Height | 4.57 mm |
| Operating Temperature | -40℃ ~ 85℃ |
The INA128PA is a precision low power Instrumentation Amplifier offers excellent accuracy. The versatile 3-op amp design and small size make these amplifiers ideal for a wide range of applications. Current-feedback input circuitry provides wide bandwidth even at high gain (200kHz at G=100). A single external resistor sets any gain from 1 to 10000. The INA128 provides an industry-standard gain equation and is compatible with the AD620. The amplifier is laser-trimmed for very low offset voltage (50µV), drift (0.5µV/°C) and high common-mode rejection (120dB at G>=100). The amplifier operates with power supplies as low as ±2.25V and quiescent current is only 700µA, ideal for battery-operated systems. Internal input protection can withstand up to ±40V without damage.
● 5nA Maximum low input bias current
● 0.5µV/°C Maximum low drift
● Inputs protected to ±40V
● 700µA Low quiescent current
● Green product and no Sb/Br
●This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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