TYPE | DESCRIPTION |
---|
Number of Pins | 3 Pin |
Case/Package | TO-220 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.214 Ω |
Power Dissipation | 24 W |
Threshold Voltage | 3.5 V |
Drain to Source Voltage (Vds) | 600 V |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 24000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Rail, Tube |
IPA60R280P7S, SP001658160
Infineon
14 Pages / 1.07 MByte
Infineon
Transistor: N-MOSFET; unipolar; 600V; 8A; 24W; TO220FP; CoolMOS™ P7
Infineon
The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
Infineon
The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
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