| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220 |
| Power Rating | 34 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.171 Ω |
| Polarity | N-Channel |
| Power Dissipation | 34 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 700 V |
| Continuous Drain Current (Ids) | 17.5A |
| Rise Time | 8.4 ns |
| Input Capacitance (Ciss) | 1850pF @100V(Vds) |
| Fall Time | 6.4 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 34 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.36 mm |
| Size-Width | 4.57 mm |
| Size-Height | 15.95 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The IPA65R190CFD is a 650V CoolMOS™ CFD2 N-channel Power MOSFET with ultra-fast body diode. This CoolMOS™ CFD2 is Infineon"s second generation of market leading high voltage CoolMOS™ MOSFET. The CFD2 device is the successor of 600V CFD with improved energy efficiency. The softer commutation behaviour and therefore better EMI behaviour gives this product a clear advantage in comparison with competitor parts.
● Limited voltage overshoot during hard commutation
● Significant Qg reduction compared to 600V CFD technology
● Tighter RDS (ON) maximum to RDS (ON) window
● Easy to design in
● Low switching losses due to low Qrr at repetitive commutation on body diode
● Self limiting di/dt and dV/dt
● Low QOSS
● Reduced turn ON and turn OFF delay times
● Outstanding CoolMOS™ quality
Infineon
20 Pages / 3.73 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
52 Pages / 3.25 MByte
Infineon
37 Pages / 2.01 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
