| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | TO-263-7 |
| Power Rating | 375 W |
| Number of Channels | 1 Channel |
| Number of Positions | 7 Position |
| Drain to Source Resistance (on) (Rds) | 0.0015 Ω |
| Polarity | N-CH |
| Power Dissipation | 375 W |
| Threshold Voltage | 2.2 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 180A |
| Rise Time | 23 ns |
| Input Capacitance (Ciss) | 15600pF @50V(Vds) |
| Input Power (Max) | 375 W |
| Fall Time | 27 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 375W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Width | 9.25 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Summary of Features:
● Optimized for synchronous rectification
● Ideal for high switching frequency
● Output capacitance reduction of up to 44%
● R DS(on) reduction of up to 43% from previous generation
●Benefits:
● Highest system efficiency
● Reduced switching and conduction losses
● Less paralleling required
● Increased power density
● Low voltage overshoot
●Target Applications:
● Telecom
● Server
● Solar
● Low voltage drives
● Light electric vehicles
● Adapter
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Transistor: N-MOSFET; unipolar; 100V; 180A; 313W; PG-TO263-7
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Trans MOSFET N-CH 100V 180A 7Pin(6+Tab) D2PAK T/R
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