| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-263-7 |
| Power Dissipation | 313 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
Description:
●OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.�
●Summary of Features:
● Combination of low R DS(on) and wide safe operating area (SOA)
● High max. pulse current
● High continuous pulse current�
●Benefits:
● Rugged linear mode operation
● Low conduction losses�
● Higher in-rush current enabled for faster start-up and shorter down time
Infineon
11 Pages / 1.07 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
Transistor: N-MOSFET; unipolar; 100V; 180A; 313W; PG-TO263-7
Infineon
Trans MOSFET N-CH 100V 180A 7Pin(6+Tab) D2PAK T/R
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