TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-263-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.0016 Ω |
Polarity | N-Channel |
Power Dissipation | 250 W |
Threshold Voltage | 1.7 V |
Drain to Source Voltage (Vds) | 60 V |
Rise Time | 79 ns |
Input Capacitance (Ciss) | 28000pF @30V(Vds) |
Fall Time | 38 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 250W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 10 mm |
Size-Width | 9.25 mm |
Size-Height | 4.4 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
Summary of Features:
● Excellent gate charge x R DS(on) product (FOM)
● Very low on-resistance R DS(on)
● Ideal for fast switching applications
● RoHS compliant - halogen free
● MSL1 rated
●Benefits:
● Highest system efficiency
● Less paralleling required
● Increased power density
● System cost reduction
● Very low voltage overshoot
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MOSFET Transistor, N Channel, 120A, 60V, 0.0016Ω, 10V, 1.7V
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Trans MOSFET N-CH 60V 120A 3Pin TO-263 T/R
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