| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 7 Pin |
| Case/Package | TO-263-7 |
| Number of Channels | 1 Channel |
| Number of Positions | 7 Position |
| Drain to Source Resistance (on) (Rds) | 0.0016 Ω |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Threshold Voltage | 2.8 V |
| Input Capacitance | 10700 pF |
| Drain to Source Voltage (Vds) | 80 V |
| Breakdown Voltage (Drain to Source) | 80 V |
| Continuous Drain Current (Ids) | 180A |
| Rise Time | 73 ns |
| Input Capacitance (Ciss) | 10700pF @40V(Vds) |
| Fall Time | 33 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10 mm |
| Size-Width | 9.25 mm |
| Size-Height | 4.4 mm |
| Operating Temperature | -55℃ ~ 175℃ |
The IPB019N08N3 G is an OptiMOS™ 3 N-channel Power Transistor with superior thermal resistance, excellent gate charge x R DS (ON) product (FOM) and dual-sided cooling. Optimized technology for DC/DC converters.
● Excellent gate charge
● Very low on resistance
● 100% Avalanche tested
● Low parasitic inductance
● Halogen-free
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