| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0018 Ω |
| Power Dissipation | 313 W |
| Threshold Voltage | 3.3 V |
| Drain to Source Voltage (Vds) | 100 V |
| Rise Time | 28 ns |
| Input Capacitance (Ciss) | 650pF @50V(Vds) |
| Fall Time | 82 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 313000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
Description:
●OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.
●Summary of Features:
● Combination of low R DS(on) and wide safe operating area (SOA)
● High max. pulse current
● High continuous pulse current
●Benefits:
● Rugged linear mode operation
● Low conduction losses
● Higher in-rush current enabled for faster start-up and shorter down time
Infineon
11 Pages / 0.98 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
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