| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 7 Pin |
| Case/Package | TO-263-7 |
| Power Rating | 300 W |
| Number of Positions | 7 Position |
| Drain to Source Resistance (on) (Rds) | 0.002 Ω |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Threshold Voltage | 2.7 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 180A |
| Rise Time | 58 ns |
| Input Capacitance (Ciss) | 11100pF @50V(Vds) |
| Fall Time | 28 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10 mm |
| Size-Width | 9.25 mm |
| Size-Height | 4.4 mm |
| Operating Temperature | -55℃ ~ 175℃ |
The IPB025N10N3 G is a 100V N-channel Power MOSFET that offers superior solutions for high efficiency and high power-density SMPS. Compared to other transistors, this MOSFET achieves a reduction of 30% in both RDS (on) and FOM (Figure of Merit). The OptiMOS™ MOSFET offers industry"s lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
● Excellent switching performance
● Environmentally-friendly
● Increased efficiency
● Highest power density
● Less paralleling required
● Smallest board-space consumption
● Easy to design
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