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IPB027N10N3GATMA1
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IPB027N10N3GATMA1 Datasheet PDF - Infineon

Manufacturer:Infineon
Category:MOSFETs
Case Package:TO-263-3
Description:D2PAK N-CH 100V 120A
Documentation:IPB027N10N3GATMA1 Datasheet (9 Pages)IPB027N10N3GATMA1 User Reference Manual Guide (270 Pages)IPB027N10N3GATMA1 Application Note (37 Pages)
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IPB027N10N3GATMA1 Datasheet PDF (9 Pages)
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IPB027N10N3GATMA1 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageTO-263-3
Power Rating300 W
Number of Channels1 Channel
Number of Positions3 Position
Drain to Source Resistance (on) (Rds)0.0023 Ω
PolarityN-Channel
Power Dissipation300 W
Threshold Voltage2.7 V
Input Capacitance11100 pF
Drain to Source Voltage (Vds)100 V
Continuous Drain Current (Ids)120A
Rise Time58 ns
Input Capacitance (Ciss)11100pF @50V(Vds)
Fall Time28 ns
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)300W (Tc)
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IPB027N10N3GATMA1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
Size-Length10.31 mm
Size-Width9.25 mm
Size-Height4.57 mm
Operating Temperature-55℃ ~ 175℃ (TJ)
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IPB027N10N3GATMA1 Documents

IPB027N10N3GATMA1 Datasheet
Infineon
9 Pages / 0.51 MByte
IPB027N10N3GATMA1 User Reference Manual Guide
Infineon
270 Pages / 11.59 MByte
IPB027N10N3GATMA1 Other Datasheet PDF
Infineon
34 Pages / 2.17 MByte
IPB027N10N3GATMA1 Application Note
Infineon
37 Pages / 2.01 MByte
IPB027N10N3GATMA1 Notice File
Infineon
1 Pages / 0.13 MByte

IPB027N10N3 Documents

IPB027N10N3GATMA1 Datasheet PDF
Infineon
D2PAK N-CH 100V 120A
IPB027N10N3 G Datasheet PDF
Infineon
Single N-Channel 100V 2.7mOhm 206NC 300W OptiMOS SMT Mosfet - TO-263-3
IPB027N10N3G Datasheet PDF
Infineon
MOSFET N-CH 100V 120A TO263-3
IPB027N10N3GATMA1 Datasheet PDF
IFA
N-Channel 100V 2.7mOhm OptiMOS™3 Power-Transistor - PG-TO-263-3
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