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IPB039N10N3GE8187ATMA1
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IPB039N10N3GE8187ATMA1 Datasheet PDF - Infineon

Manufacturer:Infineon
Category:MOSFETs
Case Package:TO-263-7
Description:Trans MOSFET N-CH 100V 160A 7Pin TO-263 T/R
Documentation:IPB039N10N3GE8187ATMA1 Datasheet (9 Pages)
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IPB039N10N3GE8187ATMA1 Datasheet PDF (9 Pages)
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IPB039N10N3GE8187ATMA1 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins7 Pin
Case/PackageTO-263-7
Number of Channels1 Channel
Power Dissipation214W (Tc)
Drain to Source Voltage (Vds)100 V
Input Capacitance (Ciss)8410pF @50V(Vds)
Power Dissipation (Max)214W (Tc)
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IPB039N10N3GE8187ATMA1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
Size-Length10 mm
Size-Width9.25 mm
Size-Height4.4 mm
Operating Temperature-55℃ ~ 175℃ (TJ)
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IPB039N10N3GE8187ATMA1 Documents

IPB039N10N3GE8187ATMA1 Datasheet
Infineon
9 Pages / 0.65 MByte

IPB039N10N3GE8187 Documents

IPB039N10N3GE8187ATMA1 Datasheet PDF
Infineon
Trans MOSFET N-CH 100V 160A 7Pin TO-263 T/R
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