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IPB042N10N3GE8187ATMA1
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IPB042N10N3GE8187ATMA1 Datasheet PDF - Infineon

Manufacturer:Infineon
Category:MOSFETs
Case Package:TO-263-3
Description:Trans MOSFET N-CH 100V 100A 3Pin TO-263 T/R
Documentation:IPB042N10N3GE8187ATMA1 Datasheet (11 Pages)
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IPB042N10N3GE8187ATMA1 Datasheet PDF (11 Pages)
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IPB042N10N3GE8187ATMA1 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageTO-263-3
Power Dissipation214W (Tc)
Drain to Source Voltage (Vds)100 V
Rise Time59 ns
Input Capacitance (Ciss)8410pF @50V(Vds)
Input Power (Max)214 W
Fall Time14 ns
Power Dissipation (Max)214W (Tc)
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IPB042N10N3GE8187ATMA1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
Operating Temperature-55℃ ~ 175℃ (TJ)
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IPB042N10N3GE8187ATMA1 Documents

IPB042N10N3GE8187ATMA1 Datasheet
Infineon
11 Pages / 0.73 MByte
IPB042N10N3GE8187ATMA1 Other Datasheet PDF
Infineon
65 Pages / 1.7 MByte

IPB042N10N3GE8187 Documents

IPB042N10N3 G E8187 Datasheet PDF
Infineon
MOSFET N-CH 100V 100A TO263-3
IPB042N10N3GE8187ATMA1 Datasheet PDF
Infineon
Trans MOSFET N-CH 100V 100A 3Pin TO-263 T/R
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