| TYPE | DESCRIPTION |
|---|
| Number of Pins | 7 Pin |
| Case/Package | TO-263-7 |
| Number of Positions | 7 Position |
| Drain to Source Resistance (on) (Rds) | 0.0034 Ω |
| Power Dissipation | 300 W |
| Threshold Voltage | 3.8 V |
| Drain to Source Voltage (Vds) | 150 V |
| Rise Time | 6 ns |
| Input Capacitance (Ciss) | 6000pF @75V(Vds) |
| Fall Time | 5 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
Description:
●The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.
●Summary of Features:
● Lower R DS(on) without compromising FOM gd and FOM oss
● Lower output charge
● Ultra-low reverse recovery charge
● Increased commutation ruggedness
● Higher switching frequency possible
●Benefits:
● Reduced paralleling
● Size reduction enabled with SuperSO8 best-in-class
● Higher power density designs
● More rugged products
● System cost reduction
● Improved EMI behavior
Infineon
10 Pages / 1.07 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
N-CH 150V 174A 4, 4mOhm TO263-7
Infineon
Trans MOSFET N-CH 150V 174A 7Pin(6+Tab) TO-263 T/R
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