| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0056 Ω |
| Power Dissipation | 214 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 150 V |
| Rise Time | 4 ns |
| Input Capacitance (Ciss) | 3600pF @75V(Vds) |
| Fall Time | 4 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 214000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Width | 9.25 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Description:
●The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.
●Summary of Features:
● Lower R DS(on) without compromising FOM gd and FOM oss
● Lower output charge
● Ultra-low reverse recovery charge
● Increased commutation ruggedness
● Higher switching frequency possible
●Benefits:
● Reduced paralleling
● Size reduction enabled with SuperSO8 best-in-class
● Higher power density designs
● More rugged products
● System cost reduction
● Improved EMI behavior
Infineon
12 Pages / 0.95 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
Trans MOSFET N-CH 150V 114A 3Pin(2+Tab) D2PAK T/R
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