| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0026 Ω |
| Polarity | P-Channel |
| Power Dissipation | 136 W |
| Threshold Voltage | 1.7 V |
| Drain to Source Voltage (Vds) | 40 V |
| Continuous Drain Current (Ids) | 120A |
| Rise Time | 16 ns |
| Input Capacitance (Ciss) | 15000pF @25V(Vds) |
| Fall Time | 57 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 136W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10 mm |
| Size-Width | 9.25 mm |
| Size-Height | 4.4 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IPB120P04P4L-03 is a P-channel enhancement-mode MOSFET with lowest switching and conduction power losses for highest thermal efficiency.
● Logic level
● AEC qualified
● MSL1 up to 260°C peak reflow
● Green device
● 100% Avalanche tested
● Simple interface drive circuit
● World"s lowest RDS (ON) at 40V
● Highest current capability
● Lowest switching and conduction power losses for highest thermal efficiency
● Robust packages with superior quality and reliability
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MOSFET P-CH 40V 120A TO263-3
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