| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 25.0 V |
| Current Rating | 50.0 A |
| Case/Package | TO-263-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.09 Ω |
| Polarity | N-Channel |
| Power Dissipation | 255 W |
| Threshold Voltage | 3 V |
| Input Capacitance | 2.80 nF |
| Gate Charge | 80.0 nC |
| Drain to Source Voltage (Vds) | 650 V |
| Continuous Drain Current (Ids) | 31.0 A |
| Rise Time | 5 ns |
| Input Capacitance (Ciss) | 2800pF @100V(Vds) |
| Input Power (Max) | 255 W |
| Fall Time | 5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 255W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.31 mm |
| Size-Width | 9.25 mm |
| Size-Height | 4.57 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Infineon
10 Pages / 0.31 MByte
Infineon
Trans MOSFET N-CH 600V 31A 3Pin(2+Tab) D2PAK T/R
Infineon
The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
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