TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 600 V |
Current Rating | 21.0 A |
Case/Package | TO-263-3 |
Power Rating | 192 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.15 Ω |
Polarity | N-Channel |
Power Dissipation | 192 W |
Threshold Voltage | 3 V |
Input Capacitance | 2.00 nF |
Gate Charge | 52.0 nC |
Drain to Source Voltage (Vds) | 650 V |
Continuous Drain Current (Ids) | 21.0 A |
Rise Time | 5 ns |
Input Capacitance (Ciss) | 2000pF @100V(Vds) |
Fall Time | 5 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 192 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tape & Reel (TR) |
Size-Length | 10.312 mm |
Size-Width | 9.45 mm |
Size-Height | 4.572 mm |
Operating Temperature | -55℃ ~ 150℃ |
The IPB60R165CP is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is designed for hard switching and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. It is specially designed for hard switching topologies for server and telecom.
● Low figure-of-merit(FOM) RON x Qg
● Extreme dV/dt rated
● High peak current capability
● Qualified according to JEDEC for target applications
● Ultra low RDS (ON)
● Very fast switching
● Internal Rg very low
● High current capability
● Significant reduction of conduction and switching losses
● High power density and efficiency for superior power conversion systems
● Best-in-class performance ratio
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