TYPE | DESCRIPTION |
---|
Case/Package | TO-263-3 |
Polarity | N-CH |
Power Dissipation | 195.3 W |
Drain to Source Voltage (Vds) | 650 V |
Continuous Drain Current (Ids) | 22.4A |
Rise Time | 7.6 ns |
Fall Time | 5.6 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 10 mm |
Size-Width | 9.25 mm |
Size-Height | 4.4 mm |
Operating Temperature | -55℃ ~ 150℃ |
Summary of Features:
● 650V technology with integrated fast body diode
● Limited voltage overshoot during hard commutation
● Significant Q g reduction compared to 600V CFD technology
● Tighter R DS(ON) max to R DS(on) typ window
● Easy to design-in
● Lower price compared to 600V CFD technology
●Benefits:
● Low switching losses due to low Q rr at repetitive commutation on body diode
● Self limiting di/dt and dv/dt
● Low Q oss
● Reduced turn on and turn of delay times
● Outstanding CoolMOS™ quality
●Target Applications:
● Telecom
● Server
● Solar
● HID lamp ballast
● LED lighting
● eMobility
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Trans MOSFET N-CH 650V 22.4A Automotive 3-Pin(2+Tab) D2PAK T/R
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