TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.0147 Ω |
Polarity | N-Channel |
Power Dissipation | 71 W |
Threshold Voltage | 2.7 V |
Drain to Source Voltage (Vds) | 100 V |
Rise Time | 12 ns |
Input Capacitance (Ciss) | 1350pF @50V(Vds) |
Fall Time | 5 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 71000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tape & Reel (TR) |
Size-Length | 6.73 mm |
Size-Width | 6.22 mm |
Size-Height | 2.41 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IPD180N10N3 G is an OptiMOS™ N-channel Power MOSFET offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM.
● Excellent switching performance
● World"s lowest RDS (ON)
● Very low Qg and Qgd
● Excellent gate charge x RDS (ON) product (FOM)
● Environmentally friendly
● Highest power density
● Less paralleling required
● Smallest board-space consumption
● Easy-to-design products
● Halogen-free
● MSL1 rated 2
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