| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.027 Ω |
| Polarity | N-Channel |
| Power Dissipation | 136 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 34A |
| Rise Time | 9 ns |
| Input Capacitance (Ciss) | 2350pF @100V(Vds) |
| Input Power (Max) | 136 W |
| Fall Time | 4 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 136W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.5 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.3 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IPD320N20N3 G is a 200V N-channel Power MOSFET ideally suited for high-frequency switching, achieving excellent performance in applications such as synchronous rectification for AC-DC SMPS and motor control. The OptiMOS™ MOSFET is optimized for hard commutation ruggedness, achieving low Qrr and lower peak reverse recovery charges. It is performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.
● Highest efficiency
● Highest power density
● Lowest board space consumption
● Minimal device paralleling required
● System cost improvement
● Environmentally-friendly
● Easy to design in
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Trans MOSFET N-CH 200V 34A 3Pin(2+Tab) DPAK
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