| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.02 Ω |
| Polarity | N-Channel |
| Power Dissipation | 71 W |
| Threshold Voltage | 1.7 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 35A |
| Rise Time | 4 ns |
| Input Capacitance (Ciss) | 2700pF @25V(Vds) |
| Input Power (Max) | 71 W |
| Fall Time | 3 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 71W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IPD35N10S3L-26 is a N-channel enhancement-mode MOSFET with lowest switching and conduction power losses for highest thermal efficiency.
● AEC-Q101 qualified
● MSL1 up to 260°C peak reflow
● Green device
● 100% Avalanche tested
● Robust packages with superior quality and reliability
● Optimized total gate charge enables smaller driver output stages
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