TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.0092 Ω |
Polarity | P-Channel |
Power Dissipation | 58 W |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 40 V |
Continuous Drain Current (Ids) | 50A |
Rise Time | 10 ns |
Input Capacitance (Ciss) | 3670pF @25V(Vds) |
Fall Time | 28 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 58W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.5 mm |
Size-Width | 6.22 mm |
Size-Height | 2.3 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IPD50P04P4-13 is a -40V P-channel Automotive MOSFET with lowest switching and conduction power losses for highest thermal efficiency. Bridge configuration could be realized with 40V P-channel as high side device with no need of charge pump.
● Normal Level and enhancement mode
● AEC qualified
● Simple interface drive circuit
● Highest current capability
● Superior quality and reliability
Infineon
9 Pages / 0.21 MByte
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138 Pages / 12.05 MByte
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40 Pages / 0.46 MByte
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56 Pages / 6.94 MByte
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2 Pages / 0.1 MByte
Infineon
MOSFET P-CH 40V 50A TO252-3
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