The IPD50R380CE is a CoolMOS™ N-channel CE Power MOSFET optimized to meet highest efficiency standards. The new series provides all benefits of a fast switching Super-junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
● Reduced energy stored in output capacitance (Eoss)
● High body diode ruggedness
● Reduced reverse recovery charge (Qrr)
● Reduced gate charge (Qg)
● Easy control of switching behaviour
● Cost attractive alternative compared to standard MOSFETs
● Outstanding quality and reliability of CoolMOS™ technology
● Extremely low losses due to very low FOM Rison Qg and Eoss
● Very high commutation ruggedness
● Easy to use/drive
● Halogen-free
● Qualified for standard grade applications
●For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
