| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.051 Ω |
| Polarity | N-Channel |
| Power Dissipation | 136 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 250 V |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 2350pF @100V(Vds) |
| Fall Time | 8 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 136W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IPD600N25N3 G is a 250V N-channel Power MOSFET ideally suited for high-frequency switching, achieving excellent performance in applications such as synchronous rectification for AC-DC SMPS and motor control. The OptiMOS™ MOSFET is optimized for hard commutation ruggedness, achieving low Qrr and lower peak reverse recovery charges. It is performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.
● Highest efficiency
● Highest power density
● Lowest board space consumption
● Minimal device paralleling required
● System cost improvement
● Environmentally-friendly
● Easy to design in
Infineon
9 Pages / 0.47 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.05 MByte
Infineon
Trans MOSFET N-CH 250V 25A 3Pin(2+Tab) DPAK T/R
Infineon
Trans MOSFET N-CH 250V 25A 3Pin TO-252 T/R
Infineon
SP000676404_N-KANAL POWER MOS_TR_RO
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
