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IPD65R650CEATMA1
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IPD65R650CEATMA1 Datasheet PDF - Infineon

Manufacturer:Infineon
Category:MOSFETs
Case Package:TO-252-3
Description:DPAK N-CH 650V 7A
Documentation:IPD65R650CEATMA1 Datasheet (17 Pages)
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IPD65R650CEATMA1 Datasheet PDF (17 Pages)
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IPD65R650CEATMA1 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageTO-252-3
Power Rating63 W
Number of Channels1 Channel
Drain to Source Resistance (on) (Rds)650 mΩ
PolarityN-CH
Power Dissipation86W (Tc)
Drain to Source Voltage (Vds)650 V
Breakdown Voltage (Drain to Source)650 V
Continuous Drain Current (Ids)7A
Rise Time8 ns
Input Capacitance (Ciss)440pF @100V(Vds)
Fall Time11 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-40 ℃
Power Dissipation (Max)86W (Tc)
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IPD65R650CEATMA1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusObsolete
PackagingTape & Reel (TR)
Size-Length6.5 mm
Size-Width6.22 mm
Size-Height2.3 mm
Operating Temperature-40℃ ~ 150℃ (TJ)
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IPD65R650CEATMA1 Documents

IPD65R650CEATMA1 Datasheet
Infineon
17 Pages / 1.3 MByte

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