| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 660 mΩ |
| Polarity | N-CH |
| Power Dissipation | 63 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 650 V |
| Breakdown Voltage (Drain to Source) | 650 V |
| Continuous Drain Current (Ids) | 6A |
| Rise Time | 8 ns |
| Input Capacitance (Ciss) | 615pF @100V(Vds) |
| Input Power (Max) | 62.5 W |
| Fall Time | 10 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.5 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.3 mm |
| Operating Temperature | -55℃ ~ 150℃ |
Summary of Features:
● 650V technology with integrated fast body diode
● Limited voltage overshoot during hard commutation
● Significant Q g reduction compared to 600V CFD technology
● Tighter R DS(ON) max to R DS(on) typ window
● Easy to design-in
● Lower price compared to 600V CFD technology
●Benefits:
● Low switching losses due to low Q rr at repetitive commutation on body diode
● Self limiting di/dt and dv/dt
● Low Q oss
● Reduced turn on and turn of delay times
● Outstanding CoolMOS™ quality
●Target Applications:
● Telecom
● Server
● Solar
● HID lamp ballast
● LED lighting
● eMobility
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21 Pages / 4.35 MByte
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Trans MOSFET N-CH 650V 6A 3Pin(2+Tab) DPAK
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