| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Polarity | N-Channel |
| Power Dissipation | 31 W |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 13A |
| Rise Time | 4 ns |
| Input Capacitance (Ciss) | 538pF @50V(Vds) |
| Fall Time | 3 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 31W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.41 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
As an alternative to traditional transistors, the IPD78CN10NGBUMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 31000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos 2 technology.
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