| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0025 Ω |
| Polarity | N-Channel |
| Power Dissipation | 94 W |
| Threshold Voltage | 1.6 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Continuous Drain Current (Ids) | 90A |
| Rise Time | 6 ns |
| Input Capacitance (Ciss) | 4000pF @25V(Vds) |
| Fall Time | 7 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 94W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.5 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.3 mm |
| Operating Temperature | -55℃ ~ 175℃ |
The IPD90N03S4L-03 is a N-channel enhancement-mode MOSFET with low switching and conduction power losses for highest thermal efficiency.
● AEC-Q101 qualified
● MSL1 up to 260°C peak reflow
● Green device
● 100% Avalanche tested
● Optimized total gate charge enables smaller driver output stages
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56 Pages / 6.94 MByte
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OptiMOS-T2 Power-Transistor
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