| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 83 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.2 Ω |
| Polarity | N-Channel |
| Power Dissipation | 83 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 900 V |
| Continuous Drain Current (Ids) | 5.1A |
| Rise Time | 20 ns |
| Input Capacitance (Ciss) | 710pF @100V(Vds) |
| Input Power (Max) | 83 W |
| Fall Time | 40 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 83W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.5 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.3 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IPD90R1K2C3 is a 900V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is designed for quasi resonant flyback/forward topologies and PC silverbox applications.
● Low figure-of-merit(FOM) RON x Qg
● Extreme dV/dt rated
● High peak current capability
● Qualified according to JEDEC for target applications
● Low specific ON-state resistance
● Very low energy storage in output capacitance (Eoss)
● Field proven CoolMOS™ quality
● High efficiency and power density
● Outstanding performance
● High reliability
● Ease of use
Infineon
10 Pages / 0.37 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
40 Pages / 0.46 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
MOSFET N-CH 900V 5.1A TO-252
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
