| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | PowerTSFN-4 |
| Power Rating | 139 W |
| Number of Positions | 5 Position |
| Drain to Source Resistance (on) (Rds) | 0.18 Ω |
| Polarity | N-Channel |
| Power Dissipation | 139 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 650 V |
| Continuous Drain Current (Ids) | 16.4A |
| Rise Time | 5 ns |
| Input Capacitance (Ciss) | 1520pF @100V(Vds) |
| Fall Time | 5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 139000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended |
| Packaging | Tape & Reel (TR) |
| Size-Length | 8.1 mm |
| Size-Width | 8.1 mm |
| Size-Height | 1.1 mm |
The IPL60R199CP is a 600V CoolMOS™ CP N-channel Power MOSFET features ultra-low gate charge. This CoolMOS™ CP offers device which provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler. ThinPAK is a new leadless SMD package for HV MOSFET. The new package has a very small footprint of only 64mm² and a very low profile with only 1mm height. The significantly smaller package size, combined with benchmark low parasitic inductances, provides designers with a new and effective way to decrease system solution size in power-density driven designs.
● Low figure-of-merit(FOM) RON x Qg
● Extreme dV/dt rate
● Ultra low RDS (ON)
● Very low internal Rg
● High current capability
● Significant reduction of conduction and switching losses
● High power density and efficiency for superior power conversion systems
● Best-in-class performance ratio
● Very fast switching
Infineon
13 Pages / 0.56 MByte
Infineon
26 Pages / 0.37 MByte
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