| TYPE | DESCRIPTION |
|---|
| Case/Package | ThinPAK 8x8 |
| Rise Time | 7.6 ns |
| Fall Time | 5.6 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -40℃ ~ 150℃ |
Summary of Features:
● 650V technology with integrated fast body diode
● Limited voltage overshoot during hard commutation
● Significant Q g reduction compared to 600V CFD technology
● Tighter R DS(ON) max to R DS(on) typ window
● Easy to design-in
● Lower price compared to 600V CFD technology
●Benefits:
● Low switching losses due to low Q rr at repetitive commutation on body diode
● Self limiting di/dt and dv/dt
● Low Q oss
● Reduced turn on and turn of delay times
● Outstanding CoolMOS™ quality
●Target Applications:
● Telecom
● Server
● Solar
● HID lamp ballast
● LED lighting
● eMobility
Infineon
15 Pages / 1.62 MByte
Infineon
270 Pages / 11.59 MByte
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33 Pages / 1.03 MByte
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37 Pages / 2.01 MByte
Infineon
N-CH 650V 21, 3A 165mOhm ThinPAK
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