| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0012 Ω |
| Polarity | N-Channel |
| Power Dissipation | 250 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 40 V |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 15000pF @20V(Vds) |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 250000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10 mm |
| Size-Width | 4.4 mm |
| Size-Height | 15.65 mm |
| Operating Temperature | -55℃ ~ 175℃ |
The IPP015N04N G is an OptiMOS™ N-channel Power MOSFET perfect choice for synchronous rectification in switched mode power supplies (SMPS). In addition it can be used for a broad range of industrial applications including fast switching DC-to-DC converter.
● Very low ON-resistance RDS (ON)
● Ideal for fast switching applications
● MSL1 rated
● Highest system efficiency
● Increased power density
● Very low voltage overshoot
● Normal level
● 100% Avalanche tested
● Halogen-free, Green device
● Qualified according to JEDEC for target applications
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