| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 214 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0039 Ω |
| Polarity | N-Channel |
| Power Dissipation | 214 W |
| Threshold Voltage | 2.7 V |
| Input Capacitance | 6320 pF |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 100A |
| Rise Time | 59 ns |
| Input Capacitance (Ciss) | 8410pF @50V(Vds) |
| Input Power (Max) | 214 W |
| Fall Time | 14 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 214W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10 mm |
| Size-Width | 4.4 mm |
| Size-Height | 15.65 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IPP045N10N3 G is an OptiMOS™ N-channel Power MOSFET offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM.
● World"s lowest RDS (ON)
● Very low Qg and Qgd
● Excellent gate charge x RDS (ON) product (FOM)
● Environmentally friendly
● Highest power density
● Less paralleling required
● Smallest board-space consumption
● Easy-to-design products
● Halogen-free, Green device
● MSL1 rated 2
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