| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0099 Ω |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Rise Time | 26 ns |
| Input Capacitance (Ciss) | 7100pF @100V(Vds) |
| Fall Time | 11 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10 mm |
| Size-Width | 4.4 mm |
| Size-Height | 15.65 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Summary of Features:
● Industry’s lowest R DS(on)
● Lowest Q g and Q gd
● World’s lowest FOM RoHS compliant − halogen free MSL 1 rated
●Benefits:
● Highest efficiency
● Highest power density
● Lowest board space consumption
● Minimal device paralleling required
● System cost improvement
● Enviromentally friendly
● Easy-to-design-in products
Infineon
27 Pages / 0.41 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
Trans MOSFET N-CH 200V 88A 3Pin TO-220 Tube
Infineon
Power Field-Effect Transistor, 88A I(D), 200V, 0.011Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3Pin
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
