| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 300 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0106 Ω |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 84A |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 5000pF @100V(Vds) |
| Fall Time | 8 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.36 mm |
| Size-Width | 4.57 mm |
| Size-Height | 9.45 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IPP120N20NFD is a N-channel Power MOSFET with improved hard commutation ruggedness. This new OptiMOS™ fast diode (FD), Infineon"s latest generation of power MOSFET is optimized for body diode hard commutation. It is the perfect choice for hard switching applications.
● Industry"s lowest RDS (ON), Qg and Qrr
● Halogen-free, Green device
● Highest system reliability
● Highest efficiency and power density
● Easy-to-design products
● Normal level
● Qualified according to JEDEC for target application
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