The IPP60R190P6 is a 600V CoolMOS™ P6 N-channel Power MOSFET with reduced gate charge. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ P6 combines the experience of the leading SJ MOSFET supplier with high class innovation. The device provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
● Extremely low losses due to very low figure of merit (RDS (ON) x Qg and EOSS)
● Very high commutation ruggedness
● Easy to use
● Increased dV/dt ruggedness
● Halogen-free, Green device
● Qualified according to JEDEC for target applications
● Higher Vth
● Optimized integrated Rg
● Improved efficiency especially in light load condition
● Better efficiency in soft switching applications due to earlier turn-OFF
● Suitable for hard and soft-switching topologies
● Optimized balance of efficiency and ease of use and good controllability of switching behaviour
● High robustness and better efficiency
● Outstanding quality and reliability
●For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
