TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.11 Ω |
Polarity | N-Channel |
Power Dissipation | 101 W |
Threshold Voltage | 3.5 V |
Drain to Source Voltage (Vds) | 650 V |
Continuous Drain Current (Ids) | 18A |
Rise Time | 15 ns |
Input Capacitance (Ciss) | 1670pF @400V(Vds) |
Fall Time | 8 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 101 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.36 mm |
Size-Width | 15.95 mm |
Size-Height | 4.57 mm |
Operating Temperature | -55℃ ~ 150℃ |
Summary of Features:
● 650V voltage
● Revolutionary best-in-class R DS(on)/package
● Reduced energy stored in output capacitance (Eoss)
● Lower gate charge Qg
● Space saving through use of smaller packages or reduction of parts
● 12 years manufacturing experience in superjunction technology
●Benefits:
● Improved safety margin and suitable for both SMPS and solar inverter applications
● Lowest conduction losses/package
● Low switching losses
● Better light load efficiency
● Increasing power density
● Outstanding CoolMOS™ quality
●Target Applications:
● Telecom
● Server
● Solar
● PC power
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