| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0037 Ω |
| Polarity | P-Channel |
| Power Dissipation | 137 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 80A |
| Rise Time | 11 ns |
| Input Capacitance (Ciss) | 11300pF @25V(Vds) |
| Fall Time | 40 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 137W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10 mm |
| Size-Width | 4.4 mm |
| Size-Height | 15.65 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IPP80P03P4L-04 is an OptiMOS™ P2 P-channel logic level enhancement mode Power Transistor features no charge pump required for high side drive, simple interface drive circuit and intended for reverse battery protection.
● High current capability
● Lowest switching and conduction power losses for highest thermal efficiency
● AEC-Q101 Qualified
● MSL1 up to 260°C peak reflow
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