| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 83 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.94 Ω |
| Polarity | N-Channel |
| Power Dissipation | 83 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 900 V |
| Continuous Drain Current (Ids) | 5.1A |
| Rise Time | 20 ns |
| Input Capacitance (Ciss) | 710pF @100V(Vds) |
| Fall Time | 40 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 830000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10 mm |
| Size-Width | 4.4 mm |
| Size-Height | 15.65 mm |
The IPP90R1K2C3 is a 900V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is designed for quasi resonant flyback/forward topologies and PC silverbox applications.
● Low figure-of-merit(FOM) RON x Qg
● Extreme dV/dt rated
● High peak current capability
● Qualified according to JEDEC for target applications
● Field proven CoolMOS™ quality
Infineon
10 Pages / 0.28 MByte
Infineon
10 Pages / 0.28 MByte
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