| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 481 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.037 Ω |
| Polarity | N-Channel |
| Power Dissipation | 481 W |
| Threshold Voltage | 3 V |
| Input Capacitance | 6530 pF |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 77.5A |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 6530pF @100V(Vds) |
| Fall Time | 7 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 481 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.13 mm |
| Size-Width | 5.21 mm |
| Size-Height | 21.1 mm |
The IPW60R041C6 is a 600V N-channel CoolMOS™ Power MOSFET designed according to the Superjunction (SJ) principle with high class innovation. The C6 MOSFET provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. CoolMOS™ Superjunction power MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems.
● Easy to control of switching behaviour
● Very high commutation ruggedness
● Better light load efficiency compared to C3
● Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness
● Improved power density
● Improved reliability
● Improved efficiency in hard switching applications
● Reduces possible ringing due to PCB layout
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