| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 60.0 A |
| Case/Package | TO-247-3 |
| Power Rating | 431 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.04 Ω |
| Polarity | N-Channel |
| Power Dissipation | 431 W |
| Threshold Voltage | 3 V |
| Input Capacitance | 6.80 nF |
| Gate Charge | 190 nC |
| Drain to Source Voltage (Vds) | 650 V |
| Continuous Drain Current (Ids) | 60.0 A |
| Rise Time | 20 ns |
| Input Capacitance (Ciss) | 6800pF @100V(Vds) |
| Fall Time | 10 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 431 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not For New Designs |
| Packaging | Tube |
| Size-Length | 16.13 mm |
| Size-Width | 5.21 mm |
| Size-Height | 21.1 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The IPW60R045CP is a 650V N-channel CoolMOS™ Power MOSFET designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
● Lowest Figure of Merit R on x Qg
● Ultra low gate charge
● Extreme dv/dt rated
● Very fast switching
● High current capability
● Significant reduction of conduction and switching losses
● High power density and efficiency for superior power conversion systems
● Best-in-class performance ratio
Infineon
11 Pages / 0.62 MByte
Infineon
1 Pages / 0.13 MByte
Infineon
MOSFET N-CH 650V 60A TO-247
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