TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.037 Ω |
Polarity | N-Channel |
Power Dissipation | 500 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 700 V |
Continuous Drain Current (Ids) | 68.5A |
Rise Time | 28 ns |
Input Capacitance (Ciss) | 8400pF @100V(Vds) |
Input Power (Max) | 500 W |
Fall Time | 8 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 500W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 16.13 mm |
Size-Width | 5.21 mm |
Size-Height | 21.1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Summary of Features:
● 650V technology with integrated fast body diode
● Limited voltage overshoot during hard commutation
● Significant Q g reduction compared to 600V CFD technology
● Tighter R DS(ON) max to R DS(on) typ window
● Easy to design-in
● Lower price compared to 600V CFD technology
●Benefits:
● Low switching losses due to low Q rr at repetitive commutation on body diode
● Self limiting di/dt and dv/dt
● Low Q oss
● Reduced turn on and turn of delay times
● Outstanding CoolMOS™ quality
●Target Applications:
● Telecom
● Server
● Solar
● HID lamp ballast
● LED lighting
● eMobility
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