| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 89 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1 Ω |
| Polarity | N-Channel |
| Power Dissipation | 89 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 900 V |
| Continuous Drain Current (Ids) | 5.70 A |
| Rise Time | 20 ns |
| Input Capacitance (Ciss) | 850pF @100V(Vds) |
| Fall Time | 35 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 89W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 16.13 mm |
| Size-Width | 5.21 mm |
| Size-Height | 21.1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IPW90R1K0C3 is a 900V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is designed for quasi resonant flyback/forward topologies and PC silverbox applications.
● Low figure-of-merit(FOM) RON x Qg
● Extreme dV/dt rated
● High peak current capability
● Qualified according to JEDEC for target applications
● Low specific ON-state resistance
● Field proven CoolMOS™ quality
● High efficiency and power density
● Outstanding performance
● High reliability
● Ease of use
Infineon
11 Pages / 0.53 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
38 Pages / 0.73 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
1 Pages / 0.13 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
