| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 4 Pin |
| Case/Package | TO-247-4 |
| Power Rating | 446 W |
| Number of Channels | 1 Channel |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 19 mΩ |
| Polarity | N-CH |
| Power Dissipation | 446 W |
| Threshold Voltage | 3.5 V |
| Drain to Source Voltage (Vds) | 650 V |
| Breakdown Voltage (Drain to Source) | 700 V |
| Continuous Drain Current (Ids) | 75A |
| Rise Time | 27 ns |
| Input Capacitance (Ciss) | 9900pF @400V(Vds) |
| Fall Time | 5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 446W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.13 mm |
| Size-Width | 5.21 mm |
| Size-Height | 21.1 mm |
| Operating Temperature | -55℃ ~ 150℃ |
Summary of Features:
● 650V voltage
● Revolutionary best-in-class R DS(on)/package
● Reduced energy stored in output capacitance (Eoss)
● Lower gate charge Qg
● Space saving through use of smaller packages or reduction of parts
● 12 years manufacturing experience in superjunction technology
●Benefits:
● Improved safety margin and suitable for both SMPS and solar inverter applications
● Lowest conduction losses/package
● Low switching losses
● Better light load efficiency
● Increasing power density
● Outstanding CoolMOS™ quality
●Target Applications:
● Telecom
● Server
● Solar
● PC power
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