| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 10.0V (min) |
| Case/Package | SOIC-8 |
| Rise/Fall Time | 100ns, 50ns |
| Number of Outputs | 2 Output |
| Output Voltage | 10.20 V |
| Output Current | 270 mA |
| Number of Channels | 2 Channel |
| Number of Positions | 8 Position |
| Power Dissipation | 625 mW |
| Rise Time | 170 ns |
| Fall Time | 90 ns |
| Fall Time (Max) | 90 ns |
| Fall Time (Max) | 170 ns |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 625 mW |
| Supply Voltage | 10V ~ 20V |
| Supply Voltage (Max) | 20 V |
| Supply Voltage (Min) | 10 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
The IR2102SPBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
● Floating channel designed for bootstrap operation
● Tolerant to negative transient voltage (dV/dt immune)
● Under-voltage lockout
● 3.3, 5 and 15V Logic input compatible
● Matched propagation delay for both channels
● Outputs out of phase with inputs
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