| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 10.0V (min) |
| Case/Package | SOIC-8 |
| Power Rating | 625 mW |
| Rise/Fall Time | 80ns, 40ns |
| Number of Outputs | 2 Output |
| Output Voltage | 600 V |
| Output Current | 250.500 mA |
| Number of Channels | 2 Channel |
| Number of Positions | 8 Position |
| Power Dissipation | 625 mW |
| Rise Time | 130 ns |
| Fall Time | 65 ns |
| Fall Time (Max) | 65 ns |
| Fall Time (Max) | 130 ns |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 625 mW |
| Supply Voltage | 10V ~ 20V |
| Supply Voltage (Max) | 20 V |
| Supply Voltage (Min) | 10 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Each |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
The IR2111SPBF is a high voltage high speed power MOSFET and IGBT Half-bridge Driver with dependent high and low-side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Internal dead-time is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
● Floating channel designed for bootstrap operation
● Tolerant to negative transient voltage (dV/dt immune)
● Under-voltage lockout for both channels
● CMOS Schmitt-triggered inputs with pull-down
● Matched propagation delay for both channels
● Internally set dead-time
● High-side output in phase with input
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15 Pages / 0.15 MByte
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48 Pages / 7.29 MByte
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73 Pages / 2.93 MByte
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30 Pages / 0.41 MByte
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5 Pages / 0.32 MByte
Infineon
8 Pages / 0.12 MByte
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