| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 10.0V (min) |
| Case/Package | SOIC-8 |
| Rise/Fall Time | 80ns, 40ns |
| Number of Outputs | 1 Output |
| Output Voltage | 620 V |
| Output Current | 200 mA |
| Number of Positions | 8 Position |
| Power Dissipation | 625 mW |
| Rise Time | 130 ns |
| Fall Time | 65 ns |
| Fall Time (Max) | 65 ns |
| Fall Time (Max) | 130 ns |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 625 mW |
| Supply Voltage | 10V ~ 20V |
| Supply Voltage (Max) | 20 V |
| Supply Voltage (Min) | 10 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
The IR2118SPBF is a single-channel Power MOSFET and IGBT Driver features proprietary HVIC and latch immune CMOS technologies enables ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low-side configuration which operates up to 600V.
● Floating channel designed for bootstrap operation
● Tolerant to negative transient voltage (dV/dt immune)
● Under-voltage lockout
● CMOS Schmitt-triggered inputs with pull-down
● Output in phase with input
● High voltage
● High speed
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