| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 12.0V (min) |
| Case/Package | DIP-8 |
| Power Rating | 1 W |
| Rise/Fall Time | 43ns, 26ns |
| Number of Outputs | 1 Output |
| Output Voltage | 23 V |
| Output Current | 1.6 A |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Power Dissipation | 1000 mW |
| Rise Time | 60 ns |
| Fall Time | 35 ns |
| Fall Time (Max) | 35 ns |
| Fall Time (Max) | 60 ns |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 1000 mW |
| Supply Voltage | 12V ~ 18V |
| Supply Voltage (Max) | 18 V |
| Supply Voltage (Min) | 12 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Each |
| Size-Length | 10.92 mm |
| Size-Width | 7.11 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
The IR2121PBF is a high speed power MOSFET and IGBT Driver with over-current limiting protection circuitry. Latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs and down to 2.5V logic. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The protection circuitry detects over-current in the driven power transistor and limits the gate drive voltage. Cycle-by-cycle shutdown is programmed by an external capacitor which directly controls the time interval between detection of the over-current limiting condition and latched shutdown. The output can be used to drive a N-channel power MOSFET or IGBT in the low-side configuration.
● Under-voltage lockout
● Current detection and limiting loop to limit driven power transistor current
● Error lead indicates fault conditions and programs shutdown time
● Output in phase with input
● 2.5, 5 and 15V Input logic compatible
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