| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 10.0V (min) |
| Case/Package | SOIC-8 |
| Power Rating | 625 mW |
| Rise/Fall Time | 80ns, 40ns |
| Number of Outputs | 1 Output |
| Output Voltage | 620 V |
| Output Current | 250 mA |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Power Dissipation | 625 mW |
| Quiescent Current | 60 µA |
| Rise Time | 80 ns |
| Fall Time | 40 ns |
| Fall Time (Max) | 65 ns |
| Fall Time (Max) | 130 ns |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 625 mW |
| Supply Voltage | 12V ~ 20V |
| Supply Voltage (Max) | 20 V |
| Supply Voltage (Min) | 10 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
The IR2127SPBF is a single-channel current sensing high voltage high speed power MOSFET and IGBT Driver with the proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs, down to 3.3V. The protection circuitry detects over-current in the driven power transistor and terminates the gate drive voltage. An open drain FAULT signal is provided to indicate that an over-current shutdown has occurred. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side or low-side configuration which operates up to 600V.
● Floating channel designed for bootstrap operation
● Tolerant to negative transient voltage (dV/dt immune)
● Under-voltage lockout
● 3.3, 5 and 15V Input logic compatible
● FAULT\ lead indicates shutdown has occurred
● Output in phase with input
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