| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 16.8V (max) |
| Operating Voltage | 10V ~ 16.8V |
| Case/Package | SOIC-8 |
| Number of Outputs | 2 Output |
| Output Voltage | ≥10.0 V |
| Supply Current | 25 mA |
| Power Dissipation | 1 W |
| Part Family | IR2153 |
| Rise Time | 150ns (Max) |
| Fall Time | 100ns (Max) |
| Fall Time (Max) | 100 ns |
| Fall Time (Max) | 150 ns |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 1000 mW |
| Supply Voltage | 10V ~ 15.6V |
| Supply Voltage (Max) | 20 V |
| Supply Voltage (Min) | 10 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Length | 10.92 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -40℃ ~ 125℃ |
The IR2153D(S) are an improved version of the popular IR2155 and IR2151 gate driver ICs, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The IR2153 provides more functionality and is easier to use than previous ICs. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the undervoltage lockout hysteresis to 1 V. Finally, special attention has been paid to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.
●Features:
● Floating Channel Designed for Bootstrap Operation
● Fully Operational to +600 V
● Cross-Conduction Prevention Logic
●High Side Output in Phase with HIN Input
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